{"day":"01","citation":{"apa":"Campos, L., Taychatanapat, T., Serbyn, M., Surakitbovorn, K., Watanabe, K., Taniguchi, T., … Jarillo Herrero, P. (2016). Landau Level Splittings, Phase Transitions, and Nonuniform Charge Distribution in Trilayer Graphene. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.117.066601","ama":"Campos L, Taychatanapat T, Serbyn M, et al. Landau Level Splittings, Phase Transitions, and Nonuniform Charge Distribution in Trilayer Graphene. Physical Review Letters. 2016;117(6). doi:10.1103/PhysRevLett.117.066601","short":"L. Campos, T. Taychatanapat, M. Serbyn, K. Surakitbovorn, K. Watanabe, T. Taniguchi, D. Abanin, P. Jarillo Herrero, Physical Review Letters 117 (2016).","ista":"Campos L, Taychatanapat T, Serbyn M, Surakitbovorn K, Watanabe K, Taniguchi T, Abanin D, Jarillo Herrero P. 2016. Landau Level Splittings, Phase Transitions, and Nonuniform Charge Distribution in Trilayer Graphene. Physical Review Letters. 117(6).","mla":"Campos, Leonardo, et al. “Landau Level Splittings, Phase Transitions, and Nonuniform Charge Distribution in Trilayer Graphene.” Physical Review Letters, vol. 117, no. 6, American Physical Society, 2016, doi:10.1103/PhysRevLett.117.066601.","chicago":"Campos, Leonardo, Thiti Taychatanapat, Maksym Serbyn, Kawin Surakitbovorn, Kenji Watanabe, Takashi Taniguchi, Dmitry Abanin, and Pablo Jarillo Herrero. “Landau Level Splittings, Phase Transitions, and Nonuniform Charge Distribution in Trilayer Graphene.” Physical Review Letters. American Physical Society, 2016. https://doi.org/10.1103/PhysRevLett.117.066601.","ieee":"L. Campos et al., “Landau Level Splittings, Phase Transitions, and Nonuniform Charge Distribution in Trilayer Graphene,” Physical Review Letters, vol. 117, no. 6. American Physical Society, 2016."},"status":"public","volume":117,"year":"2016","title":"Landau Level Splittings, Phase Transitions, and Nonuniform Charge Distribution in Trilayer Graphene","type":"journal_article","publisher":"American Physical Society","oa":1,"abstract":[{"lang":"eng","text":"We report on magnetotransport studies of dual-gated, Bernal-stacked trilayer graphene (TLG) encapsulated in boron nitride crystals. We observe a quantum Hall effect staircase which indicates a complete lifting of the 12-fold degeneracy of the zeroth Landau level. As a function of perpendicular electric field, our data exhibit a sequence of phase transitions between all integer quantum Hall states in the filling factor interval -8<ν<0. We develop a theoretical model and argue that, in contrast to monolayer and bilayer graphene, the observed Landau level splittings and quantum Hall phase transitions can be understood within a single-particle picture, but imply the presence of a charge density imbalance between the inner and outer layers of TLG, even at charge neutrality and zero transverse electric field. Our results indicate the importance of a previously unaccounted band structure parameter which, together with a more accurate estimate of the other tight-binding parameters, results in a significantly improved determination of the electronic and Landau level structure of TLG."}],"author":[{"last_name":"Campos","first_name":"Leonardo","full_name":"Campos, Leonardo C"},{"first_name":"Thiti","last_name":"Taychatanapat","full_name":"Taychatanapat, Thiti"},{"id":"47809E7E-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0002-2399-5827","first_name":"Maksym","last_name":"Serbyn","full_name":"Maksym Serbyn"},{"full_name":"Surakitbovorn, Kawin N","first_name":"Kawin","last_name":"Surakitbovorn"},{"last_name":"Watanabe","first_name":"Kenji","full_name":"Watanabe, Kenji"},{"last_name":"Taniguchi","first_name":"Takashi","full_name":"Taniguchi, Takashi"},{"full_name":"Abanin, Dmitry A","last_name":"Abanin","first_name":"Dmitry"},{"first_name":"Pablo","last_name":"Jarillo Herrero","full_name":"Jarillo-Herrero, Pablo"}],"publication":"Physical Review Letters","publication_status":"published","main_file_link":[{"url":"https://arxiv.org/abs/1607.00784","open_access":"1"}],"month":"04","doi":"10.1103/PhysRevLett.117.066601","quality_controlled":0,"date_published":"2016-04-01T00:00:00Z","issue":"6","date_updated":"2021-01-12T08:22:26Z","_id":"985","date_created":"2018-12-11T11:49:33Z","publist_id":"6415","acknowledgement":"This work has been primarily supported by the National Science Foundation (DMR-1405221) for device fabrication and transport, and partly by ONR Young Investigator Award N00014-13-1-0610 for data analysis.","extern":1,"intvolume":" 117"}