Intrinsic quantized anomalous Hall effect in a moiré heterostructure, part I: Device fabrication and transport
Zhang Y, Serlin M, Tschirhart C, Polshyn H, Zhu J, Balents L, Huber ME, Taniguchi T, Watanabe K, Young A. 2020. Intrinsic quantized anomalous Hall effect in a moiré heterostructure, part I: Device fabrication and transport. APS March Meeting 2020. APS: American Physical Society, Bulletin of the American Physical Society, vol. 65, B59.00012.
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Author
Zhang, Yuxuan;
Serlin, Marec;
Tschirhart, Charles;
Polshyn, HryhoriyISTA 
;
Zhu, Jiacheng;
Balents, Leon;
Huber, Martin E.;
Taniguchi, Takashi;
Watanabe, Kenji;
Young, Andrea
;
Zhu, Jiacheng;
Balents, Leon;
Huber, Martin E.;
Taniguchi, Takashi;
Watanabe, Kenji;
Young, AndreaSeries Title
Bulletin of the American Physical Society
Abstract
We report the observation of a quantized anomalous Hall effect in a moiré heterostructure consisting of twisted bilayer graphene aligned to an encapsulating hBN substrate. The effect occurs at a density of 3 electrons per superlattice unit cell, where we observe magnetic hysteresis and a Hall resistance quantized to within 0.1% of the resistance quantum at temperatures as high as 3K. In this first of 3 talks, I will describe the fabrication procedure for our device as well as basic transport characterization measurements. I will introduce the phenomenology of twisted bilayer graphene and present evidence for hBN alignment as manifested in the hierarchy of symmetry-breaking gaps and anomalous magnetoresistance.
Publishing Year
Date Published
2020-03-01
Proceedings Title
APS March Meeting 2020
Publisher
American Physical Society
Acknowledgement
I would like to thank the MURI program, Sloan foundation, AFOSR, and ARO for their generous support of this work.
Volume
65
Issue
1
Article Number
B59.00012
Conference
APS: American Physical Society
Conference Location
Denver, CO, United States
Conference Date
2020-03-02 – 2020-03-06
IST-REx-ID
Cite this
Zhang Y, Serlin M, Tschirhart C, et al. Intrinsic quantized anomalous Hall effect in a moiré heterostructure, part I: Device fabrication and transport. In: APS March Meeting 2020. Vol 65. American Physical Society; 2020.
Zhang, Y., Serlin, M., Tschirhart, C., Polshyn, H., Zhu, J., Balents, L., … Young, A. (2020). Intrinsic quantized anomalous Hall effect in a moiré heterostructure, part I: Device fabrication and transport. In APS March Meeting 2020 (Vol. 65). Denver, CO, United States: American Physical Society.
Zhang, Yuxuan, Marec Serlin, Charles Tschirhart, Hryhoriy Polshyn, Jiacheng Zhu, Leon Balents, Martin E. Huber, Takashi Taniguchi, Kenji Watanabe, and Andrea Young. “Intrinsic Quantized Anomalous Hall Effect in a Moiré Heterostructure, Part I: Device Fabrication and Transport.” In APS March Meeting 2020, Vol. 65. American Physical Society, 2020.
Y. Zhang et al., “Intrinsic quantized anomalous Hall effect in a moiré heterostructure, part I: Device fabrication and transport,” in APS March Meeting 2020, Denver, CO, United States, 2020, vol. 65, no. 1.
Zhang Y, Serlin M, Tschirhart C, Polshyn H, Zhu J, Balents L, Huber ME, Taniguchi T, Watanabe K, Young A. 2020. Intrinsic quantized anomalous Hall effect in a moiré heterostructure, part I: Device fabrication and transport. APS March Meeting 2020. APS: American Physical Society, Bulletin of the American Physical Society, vol. 65, B59.00012.
Zhang, Yuxuan, et al. “Intrinsic Quantized Anomalous Hall Effect in a Moiré Heterostructure, Part I: Device Fabrication and Transport.” APS March Meeting 2020, vol. 65, no. 1, B59.00012, American Physical Society, 2020.
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