Lattice expansion enables interstitial doping to achieve a high average ZT in n‐type PbS

Liu Z, Hong T, Xu L, Wang S, Gao X, Chang C, Ding X, Xiao Y, Zhao L. 2023. Lattice expansion enables interstitial doping to achieve a high average ZT in n‐type PbS. Interdisciplinary Materials. 2(1), 161–170.

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Journal Article | Published | English
Author
Liu, Zhengtao; Hong, Tao; Xu, Liqing; Wang, Sining; Gao, Xiang; Chang, ChengISTA ; Ding, Xiangdong; Xiao, Yu; Zhao, Li‐Dong
Department
Abstract
Lead sulfide (PbS) presents large potential in thermoelectric application due to its earth-abundant S element. However, its inferior average ZT (ZTave) value makes PbS less competitive with its analogs PbTe and PbSe. To promote its thermoelectric performance, this study implements strategies of continuous Se alloying and Cu interstitial doping to synergistically tune thermal and electrical transport properties in n-type PbS. First, the lattice parameter of 5.93 Å in PbS is linearly expanded to 6.03 Å in PbS0.5Se0.5 with increasing Se alloying content. This expanded lattice in Se-alloyed PbS not only intensifies phonon scattering but also facilitates the formation of Cu interstitials. Based on the PbS0.6Se0.4 content with the minimal lattice thermal conductivity, Cu interstitials are introduced to improve the electron density, thus boosting the peak power factor, from 3.88 μW cm−1 K−2 in PbS0.6Se0.4 to 20.58 μW cm−1 K−2 in PbS0.6Se0.4−1%Cu. Meanwhile, the lattice thermal conductivity in PbS0.6Se0.4−x%Cu (x = 0–2) is further suppressed due to the strong strain field caused by Cu interstitials. Finally, with the lowered thermal conductivity and high electrical transport properties, a peak ZT ~1.1 and ZTave ~0.82 can be achieved in PbS0.6Se0.4 − 1%Cu at 300–773K, which outperforms previously reported n-type PbS.
Publishing Year
Date Published
2023-01-01
Journal Title
Interdisciplinary Materials
Publisher
Wiley
Acknowledgement
The authors would like to acknowledge the strong supportof microstructure observation from Center for HighPressure Science and Technology Advanced Research(HPSTAR). We acknowledge the financial support fromthe National Natural Science Foundation of China:52172236, the Fundamental Research Funds for theCentral Universities: xtr042021007, Top Young TalentsProgramme of Xi'an Jiaotong University and NationalScience Fund for Distinguished Young Scholars: 51925101.
Volume
2
Issue
1
Page
161-170
eISSN
IST-REx-ID

Cite this

Liu Z, Hong T, Xu L, et al. Lattice expansion enables interstitial doping to achieve a high average ZT in n‐type PbS. Interdisciplinary Materials. 2023;2(1):161-170. doi:10.1002/idm2.12056
Liu, Z., Hong, T., Xu, L., Wang, S., Gao, X., Chang, C., … Zhao, L. (2023). Lattice expansion enables interstitial doping to achieve a high average ZT in n‐type PbS. Interdisciplinary Materials. Wiley. https://doi.org/10.1002/idm2.12056
Liu, Zhengtao, Tao Hong, Liqing Xu, Sining Wang, Xiang Gao, Cheng Chang, Xiangdong Ding, Yu Xiao, and Li‐Dong Zhao. “Lattice Expansion Enables Interstitial Doping to Achieve a High Average ZT in N‐type PbS.” Interdisciplinary Materials. Wiley, 2023. https://doi.org/10.1002/idm2.12056.
Z. Liu et al., “Lattice expansion enables interstitial doping to achieve a high average ZT in n‐type PbS,” Interdisciplinary Materials, vol. 2, no. 1. Wiley, pp. 161–170, 2023.
Liu Z, Hong T, Xu L, Wang S, Gao X, Chang C, Ding X, Xiao Y, Zhao L. 2023. Lattice expansion enables interstitial doping to achieve a high average ZT in n‐type PbS. Interdisciplinary Materials. 2(1), 161–170.
Liu, Zhengtao, et al. “Lattice Expansion Enables Interstitial Doping to Achieve a High Average ZT in N‐type PbS.” Interdisciplinary Materials, vol. 2, no. 1, Wiley, 2023, pp. 161–70, doi:10.1002/idm2.12056.
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