Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping
Katsaros G, Rastelli A, Stoffel M, Costantini G, Schmidt O, Kern K, Tersoff J, Müller E, Von Känel H. 2006. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. 89(25).
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Journal Article
| Published
Author
Katsaros, GeorgiosISTA;
Rastelli, Armando;
Stoffel, Mathieu;
Costantini, Giovanni;
Schmidt, Oliver G;
Kern, Klaus;
Tersoff, Jerry;
Müller, Elisabeth;
Von Känel, Hans
Abstract
The authors apply selective wet chemical etching and atomic force microscopy to reveal the three-dimensional shape of SiGeSi (001) islands after capping with Si. Although the "self-assembled quantum dots" remain practically unaffected by capping in the temperature range of 300-450 °C, significant morphological changes take place on the Si surface. At 450 °C, the morphology of the capping layer (Si matrix) evolves toward an intriguing semifacetted structure, which we call a "ziggurat," giving the misleading impression of a stepped SiGe island shape.
Publishing Year
Date Published
2006-01-01
Journal Title
Applied Physics Letters
Publisher
American Institute of Physics
Volume
89
Issue
25
IST-REx-ID
Cite this
Katsaros G, Rastelli A, Stoffel M, et al. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. 2006;89(25). doi:10.1063/1.2405876
Katsaros, G., Rastelli, A., Stoffel, M., Costantini, G., Schmidt, O., Kern, K., … Von Känel, H. (2006). Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.2405876
Katsaros, Georgios, Armando Rastelli, Mathieu Stoffel, Giovanni Costantini, Oliver Schmidt, Klaus Kern, Jerry Tersoff, Elisabeth Müller, and Hans Von Känel. “Evolution of Buried Semiconductor Nanostructures and Origin of Stepped Surface Mounds during Capping.” Applied Physics Letters. American Institute of Physics, 2006. https://doi.org/10.1063/1.2405876.
G. Katsaros et al., “Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping,” Applied Physics Letters, vol. 89, no. 25. American Institute of Physics, 2006.
Katsaros G, Rastelli A, Stoffel M, Costantini G, Schmidt O, Kern K, Tersoff J, Müller E, Von Känel H. 2006. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. 89(25).
Katsaros, Georgios, et al. “Evolution of Buried Semiconductor Nanostructures and Origin of Stepped Surface Mounds during Capping.” Applied Physics Letters, vol. 89, no. 25, American Institute of Physics, 2006, doi:10.1063/1.2405876.
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