Single-electron currents in designer single-cluster devices

Atomically precise clusters can be used to create single-electron devices wherein a single redox-active cluster is connected to two macroscopic electrodes via anchoring ligands. Unlike single-electron devices comprising nanocrystals, these cluster-based devices can be fabricated with atomic precision. This affords an unprecedented level of control over the device properties. Herein, we design a series of cobalt chalcogenide clusters with varying ligand geometries and core nuclearities to control their current–voltage (I–V) characteristics in a scanning tunneling microscope-based break junction (STM-BJ) device. First, the device geometry is modified by precisely positioning junction-anchoring ligands on the surface of the cluster. We show that the I–V characteristics are independent of ligand placement, confirming a sequential, single-electron tunneling mechanism. Next, we chemically fuse two clusters to realize a larger cluster dimer that behaves as a single electronic unit, possessing a smaller reorganization energy and more accessible redox states than the monomeric analogues. As a result, dimer-based devices exhibit significantly higher currents and can even be pushed to current saturation at high bias. Owing to these controllable properties, single-cluster junctions serve as an excellent platform for exploring incoherent charge transport processes at the nanoscale. With this understanding, as well as properties such as nonlinear I–V characteristics and rectification, these molecular clusters may function as conductive inorganic nodes in new devices and materials.