Molecule Nanoelectronics

Venkataraman L. 2008. Molecule Nanoelectronics. 2008 International Symposium on VLSI Technology, Systems and Applications. VLSI-TSA; Symposium on VLSI Technology, Systems and Applications, 64–65.

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Abstract
We measure the conductance of over 30 amine terminated molecules by breaking Au point-contacts in a molecular solution at room temperature. We find that the variability of the observed conductance for the diamine molecule-Au junctions is much less than the variability for diisonitrile and dithiol-Au junctions. This narrow distribution enables unambiguous conductance measurements of single molecules. For an alkane diamine series with 2-8 carbon atoms in the hydrocarbon chain and for polyphenyl diamine with 1-3 benzene rings, our results show that conductance decreases exponentially with length. For biphenyl diamines with different substituents that alter the phenyl-phenyl dihedral angle, we find that the conductance decreases with increasing twist angle, following a cosine squared dependence. Finally, for a series of substituted benzene diamines, we find that electron donating substituents on the ring, which drive the occupied molecular orbitals up, increase the junction conductance while electron withdrawing substituents have the opposite effect. Thus for this measured series, conductance varies inversely with the calculated ionization potential of the molecules. These results reveal that the occupied states are closest to the gold Fermi energy, indicating that the tunneling transport through these molecules is analogous to hole tunneling through an insulating film.
Publishing Year
Date Published
2008-04-25
Proceedings Title
2008 International Symposium on VLSI Technology, Systems and Applications
Publisher
IEEE
Page
64-65
Conference
VLSI-TSA; Symposium on VLSI Technology, Systems and Applications
Conference Location
Hsinchu, Taiwan
Conference Date
2008-04-21 – 2008-04-23
ISSN
IST-REx-ID

Cite this

Venkataraman L. Molecule Nanoelectronics. In: 2008 International Symposium on VLSI Technology, Systems and Applications. IEEE; 2008:64-65. doi:10.1109/vtsa.2008.4530800
Venkataraman, L. (2008). Molecule Nanoelectronics. In 2008 International Symposium on VLSI Technology, Systems and Applications (pp. 64–65). Hsinchu, Taiwan: IEEE. https://doi.org/10.1109/vtsa.2008.4530800
Venkataraman, Latha. “Molecule Nanoelectronics.” In 2008 International Symposium on VLSI Technology, Systems and Applications, 64–65. IEEE, 2008. https://doi.org/10.1109/vtsa.2008.4530800.
L. Venkataraman, “Molecule Nanoelectronics,” in 2008 International Symposium on VLSI Technology, Systems and Applications, Hsinchu, Taiwan, 2008, pp. 64–65.
Venkataraman L. 2008. Molecule Nanoelectronics. 2008 International Symposium on VLSI Technology, Systems and Applications. VLSI-TSA; Symposium on VLSI Technology, Systems and Applications, 64–65.
Venkataraman, Latha. “Molecule Nanoelectronics.” 2008 International Symposium on VLSI Technology, Systems and Applications, IEEE, 2008, pp. 64–65, doi:10.1109/vtsa.2008.4530800.

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