Redox-driven antiaromaticity enables multistate conductancein 1D topological insulators

Lee W, Shi W, Kwon J, Low J, Wei S, Yin X, Campos LM, Venkataraman L. 2026. Redox-driven antiaromaticity enables multistate conductancein 1D topological insulators. Journal of the AmericanChemical Society. 148(37), 40536–40542.

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Journal Article | Published | English

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Author
Lee, Woojung; Shi, WanzhuoISTA; Kwon, Junho; Low, Jonathan; Wei, Sujun; Yin, Xiaodong; Campos, Luis M.; Venkataraman, LathaISTA

Corresponding author has ISTA affiliation

Department
Abstract
Conjugated molecules with diradical character have emerged as promising building blocks for high-conductance single-molecule electronics because of their behavior as 1D topological insulators. However, the impact of antiaromaticity on these radical-based edge states has not been explored. Here, we introduce thiophene-based molecular wires that exhibit intrinsic diradical character in their ground state under ambient conditions and systematically investigate how their conductance responds to changes in aromaticity upon the oxidation of fluorene-based flanking moieties. Using scanning tunneling microscopy-based break junction (STM-BJ) techniques, we show that the conductance increases with molecular length in the neutral state, supporting one-dimensional topological behavior. We further examine the effect of oxidation on conductance through three complementary methods, revealing substantial conductance enhancements that we attribute to an increase in the antiaromatic character of the wires. Together, these findings establish a rational design strategy for highly conducting, electrochemically switchable molecular junctions, with implications for single-molecule electronics.
Publishing Year
Date Published
2026-09-07
Journal Title
Journal of the AmericanChemical Society
Publisher
American Chemical Society
Acknowledgement
This work was supported in part by the National Science Foundation under grant DMR-2241180 and the Institute of Science and Technology Austria. L.M.C. thanks the National Science Foundation for funding under award DMR-2453907. Open access funding provided by Institute of Science and Technology Austria.
Volume
148
Issue
37
Page
40536–40542
ISSN
eISSN
IST-REx-ID

Cite this

Lee W, Shi W, Kwon J, et al. Redox-driven antiaromaticity enables multistate conductancein 1D topological insulators. Journal of the AmericanChemical Society. 2026;148(37):40536–40542. doi:10.1021/jacs.6c15721
Lee, W., Shi, W., Kwon, J., Low, J., Wei, S., Yin, X., … Venkataraman, L. (2026). Redox-driven antiaromaticity enables multistate conductancein 1D topological insulators. Journal of the AmericanChemical Society. American Chemical Society. https://doi.org/10.1021/jacs.6c15721
Lee, Woojung, Wanzhuo Shi, Junho Kwon, Jonathan Low, Sujun Wei, Xiaodong Yin, Luis M. Campos, and Latha Venkataraman. “Redox-Driven Antiaromaticity Enables Multistate Conductancein 1D Topological Insulators.” Journal of the AmericanChemical Society. American Chemical Society, 2026. https://doi.org/10.1021/jacs.6c15721.
W. Lee et al., “Redox-driven antiaromaticity enables multistate conductancein 1D topological insulators,” Journal of the AmericanChemical Society, vol. 148, no. 37. American Chemical Society, pp. 40536–40542, 2026.
Lee W, Shi W, Kwon J, Low J, Wei S, Yin X, Campos LM, Venkataraman L. 2026. Redox-driven antiaromaticity enables multistate conductancein 1D topological insulators. Journal of the AmericanChemical Society. 148(37), 40536–40542.
Lee, Woojung, et al. “Redox-Driven Antiaromaticity Enables Multistate Conductancein 1D Topological Insulators.” Journal of the AmericanChemical Society, vol. 148, no. 37, American Chemical Society, 2026, pp. 40536–40542, doi:10.1021/jacs.6c15721.
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