Bilayer crystals of trapped ions for quantum information processing
Hawaldar S, Shahi P, Carter AL, Rey AM, Bollinger JJ, Shankar A. 2024. Bilayer crystals of trapped ions for quantum information processing. Physical Review X. 14(3), 031030.
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Author
Hawaldar, SamarthISTA
;
Shahi, Prakriti;
Carter, Allison L.;
Rey, Ana Maria;
Bollinger, John J.;
Shankar, Athreya
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Abstract
Trapped-ion systems are a leading platform for quantum information processing, but they are currently limited to 1D and 2D arrays, which imposes restrictions on both their scalability and their range of applications. Here, we propose a path to overcome this limitation by demonstrating that Penning traps can be used to realize remarkably clean bilayer crystals, wherein hundreds of ions self-organize into two well-defined layers. These bilayer crystals are made possible by the inclusion of an anharmonic trapping potential, which is readily implementable with current technology. We study the normal modes of this system and discover salient differences compared to the modes of single-plane crystals. The bilayer geometry and the unique properties of the normal modes open new opportunities—in particular, in quantum sensing and quantum simulation—that are not straightforward in single-plane crystals. Furthermore, we illustrate that it may be possible to extend the ideas presented here to realize multilayer crystals with more than two layers. Our work increases the dimensionality of trapped-ion systems by efficiently utilizing all three spatial dimensions, and it lays the foundation for a new generation of quantum information processing experiments with multilayer 3D crystals of trapped ions.
Publishing Year
Date Published
2024-08-16
Journal Title
Physical Review X
Acknowledgement
We thank M. Miskeen Khan, Jennifer Lilieholm, and Wes Johnson for a careful reading and feedback on the manuscript. We acknowledge discussions with Dan Dubin, John Zaris, and Scott Parker. S. H. acknowledges the support of Kishore Vaigyanik Protsahan Yojana, Department of Science and Technology, Government of India. A. S. acknowledges the support of a C. V. Raman post-doctoral fellowship. A. L. C., A. M. R., and J. J. B. acknowledge funding from the U.S. Department of Energy, Office of Science, NQI Science Research Centers, Quantum Systems Accelerator (QSA), a collaboration between the U.S. Department of Energy, Office of Science and other agencies. A. M. R. acknowledges additional support from VBFF, ARO Grant No. W911NF-24-1-0128, by the NSF Grants No. JILA-PFC PHY-2317149 and No. QLCI-OMA-2016244, and by NIST. J. J. B. acknowledges additional support from the DARPA ONISQ program and AFOSR Grant No. FA9550-201-0019.
Volume
14
Issue
3
Article Number
031030
eISSN
IST-REx-ID
Cite this
Hawaldar S, Shahi P, Carter AL, Rey AM, Bollinger JJ, Shankar A. Bilayer crystals of trapped ions for quantum information processing. Physical Review X. 2024;14(3). doi:10.1103/PhysRevX.14.031030
Hawaldar, S., Shahi, P., Carter, A. L., Rey, A. M., Bollinger, J. J., & Shankar, A. (2024). Bilayer crystals of trapped ions for quantum information processing. Physical Review X. American Physical Society. https://doi.org/10.1103/PhysRevX.14.031030
Hawaldar, Samarth, Prakriti Shahi, Allison L. Carter, Ana Maria Rey, John J. Bollinger, and Athreya Shankar. “Bilayer Crystals of Trapped Ions for Quantum Information Processing.” Physical Review X. American Physical Society, 2024. https://doi.org/10.1103/PhysRevX.14.031030.
S. Hawaldar, P. Shahi, A. L. Carter, A. M. Rey, J. J. Bollinger, and A. Shankar, “Bilayer crystals of trapped ions for quantum information processing,” Physical Review X, vol. 14, no. 3. American Physical Society, 2024.
Hawaldar S, Shahi P, Carter AL, Rey AM, Bollinger JJ, Shankar A. 2024. Bilayer crystals of trapped ions for quantum information processing. Physical Review X. 14(3), 031030.
Hawaldar, Samarth, et al. “Bilayer Crystals of Trapped Ions for Quantum Information Processing.” Physical Review X, vol. 14, no. 3, 031030, American Physical Society, 2024, doi:10.1103/PhysRevX.14.031030.
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