Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices

Borovkov, Maksim

Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices

Borovkov M. 2026. Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices, Institute of Science and Technology Austria, 10.15479/AT-ISTA-22242.

Download

noise_paper_public_deposit.zip 3.08 GB [Published Version]

DOI

10.15479/AT-ISTA-22242

Research Data

Creator

Borovkov, Maksim^ISTA

Corresponding author has ISTA affiliation

Contributor

Borovkov, Maksim^ISTA

Department

Graduate School
Katsaros Group

Grant

Quantum bits with Kitaev Transmons
Center for Correlated Quantum Materials and Solid State Quantum Systems: Conventional and unconventional topological superconductors
Merging spin and superconducting qubits in planar Ge
Realization and Manipulation of a Planar hybrid superconducting Andreev spin qubit in Germanium
Superconducting spin qubits in planar Ge

Abstract

This deposit contains the data and analysis code accompanying the publication "Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting–Superconducting Devices" (Borovkov et al.). The deposit includes the raw transport and current-noise measurements of three gate-defined quantum-dot devices as QCodes SQLite databases, the master table of the charge-noise (flank-method) analysis with the pointers linking every analyzed PSD trace to the raw data, the toy-model noise simulation datasets behind the supplementary figures, the archived analysis figures (PSD fits and lever-arm extractions), and the Python code reproducing the full analysis and all figures. The code is also maintained at https://github.com/ISTA-Nanoelectronics/noise_paper_public; instructions are provided in the README files.

Publishing Year

2026

Date Published

2026-07-04

Publisher

Institute of Science and Technology Austria

Acknowledged SSUs

Machine Shop
Nanofabrication Facility

IST-REx-ID

22242

Cite this

Borovkov M. Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices. 2026. doi:10.15479/AT-ISTA-22242

Borovkov, M. (2026). Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices. Institute of Science and Technology Austria. https://doi.org/10.15479/AT-ISTA-22242

Borovkov, Maksim. “Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices.” Institute of Science and Technology Austria, 2026. https://doi.org/10.15479/AT-ISTA-22242.

M. Borovkov, “Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices.” Institute of Science and Technology Austria, 2026.

Borovkov, Maksim. Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices. Institute of Science and Technology Austria, 2026, doi:10.15479/AT-ISTA-22242.

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