Detecting induced p±ip pairing at the Al-InAs interface with a quantum microwave circuit

Phan, Duc T; Senior, Jorden L; Ghazaryan, Areg; Hatefipour, M.; Strickland, W. M.; Shabani, J.; Serbyn, Maksym; Higginbotham, Andrew P

Detecting induced p±ip pairing at the Al-InAs interface with a quantum microwave circuit

Phan DT, Senior JL, Ghazaryan A, Hatefipour M, Strickland WM, Shabani J, Serbyn M, Higginbotham AP. 2022. Detecting induced p±ip pairing at the Al-InAs interface with a quantum microwave circuit. Physical Review Letters. 128(10), 107701.

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https://doi.org/10.48550/arXiv.2107.03695

DOI

10.1103/physrevlett.128.107701

Journal Article | Published | English

Scopus indexed

Author

Phan, Duc^ISTA; Senior, Jorden L^ISTA ; Ghazaryan, Areg^ISTA ; Hatefipour, M.; Strickland, W. M.; Shabani, J.; Serbyn, Maksym^ISTA ; Higginbotham, Andrew P^ISTA

Department

Serbyn Group
Higginbotham Group

Grant

ISTplus - Postdoctoral Fellowships

Abstract

Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a twodimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband p±ip pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to magnetic field. Separately resolving the Al and InAs contributions allows us to determine the carrier density and mobility in the InAs.

Keywords

General Physics and Astronomy

Publishing Year

2022

Date Published

2022-03-11

Journal Title

Physical Review Letters

Acknowledgement

M. S. acknowledges useful discussions with A. Levchenko and P. A. Lee, and E. Berg. This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility. J. S. and A. G. acknowledge funding from the European Union’s Horizon 2020 research and innovation program under the Marie Skłodowska-Curie Grant Agreement No. 754411.W. M. Hatefipour, W. M. Strickland and J. Shabani acknowledge funding from Office of Naval Research Award No. N00014-21-1-2450.

Acknowledged SSUs

Machine Shop
Nanofabrication Facility

Volume

128

Issue

Article Number

107701

ISSN

0031-9007

eISSN

1079-7114

IST-REx-ID

10851

Cite this

Phan DT, Senior JL, Ghazaryan A, et al. Detecting induced p±ip pairing at the Al-InAs interface with a quantum microwave circuit. Physical Review Letters. 2022;128(10). doi:10.1103/physrevlett.128.107701

Phan, D. T., Senior, J. L., Ghazaryan, A., Hatefipour, M., Strickland, W. M., Shabani, J., … Higginbotham, A. P. (2022). Detecting induced p±ip pairing at the Al-InAs interface with a quantum microwave circuit. Physical Review Letters. American Physical Society. https://doi.org/10.1103/physrevlett.128.107701

Phan, Duc T, Jorden L Senior, Areg Ghazaryan, M. Hatefipour, W. M. Strickland, J. Shabani, Maksym Serbyn, and Andrew P Higginbotham. “Detecting Induced P±ip Pairing at the Al-InAs Interface with a Quantum Microwave Circuit.” Physical Review Letters. American Physical Society, 2022. https://doi.org/10.1103/physrevlett.128.107701.

D. T. Phan et al., “Detecting induced p±ip pairing at the Al-InAs interface with a quantum microwave circuit,” Physical Review Letters, vol. 128, no. 10. American Physical Society, 2022.

Phan, Duc T., et al. “Detecting Induced P±ip Pairing at the Al-InAs Interface with a Quantum Microwave Circuit.” Physical Review Letters, vol. 128, no. 10, 107701, American Physical Society, 2022, doi:10.1103/physrevlett.128.107701.

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