Kinetic origin of island intermixing during the growth of Ge on Si (001)
Katsaros G, Costantini G, Stoffel M, Esteban R, Bittner A, Rastelli A, Denker U, Schmidt O, Kern K. 2005. Kinetic origin of island intermixing during the growth of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics. 72(19).
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Journal Article
| Published
Author
Katsaros, GeorgiosISTA;
Costantini, Giovanni;
Stoffel, Mathieu;
Esteban, Rubén;
Bittner, Alexander M;
Rastelli, Armando;
Denker, Ulrich;
Schmidt, Oliver G;
Kern, Klaus
Abstract
The effects of substrate temperature, growth rate, and postgrowth annealing on the composition of Ge islands grown on Si(001) were investigated with a combination of selective wet chemical etching and atomic force microscopy. A simple kinetic model comprising only surface diffusion processes can explain all the experimentally observed compositional profiles for pyramid and dome islands grown in the 560-620°C range. From this model three-dimensional compositional maps were extracted. By performing annealing experiments a change in the composition of the domes was observed. This could be explained as the result of the islands' movement induced by alloying-driven energy minimization. Also in this case kinetically hindered bulk diffusion processes are not needed to explain the experimental observations.
Publishing Year
Date Published
2005-11-15
Journal Title
Physical Review B - Condensed Matter and Materials Physics
Acknowledgement
G. K. acknowledges the financial support of DAAD (Deutscher Akademischer Austausch Dienst)
Volume
72
Issue
19
IST-REx-ID
Cite this
Katsaros G, Costantini G, Stoffel M, et al. Kinetic origin of island intermixing during the growth of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics. 2005;72(19). doi:10.1103/PhysRevB.72.195320
Katsaros, G., Costantini, G., Stoffel, M., Esteban, R., Bittner, A., Rastelli, A., … Kern, K. (2005). Kinetic origin of island intermixing during the growth of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics. American Physical Society. https://doi.org/10.1103/PhysRevB.72.195320
Katsaros, Georgios, Giovanni Costantini, Mathieu Stoffel, Rubén Esteban, Alexander Bittner, Armando Rastelli, Ulrich Denker, Oliver Schmidt, and Klaus Kern. “Kinetic Origin of Island Intermixing during the Growth of Ge on Si (001).” Physical Review B - Condensed Matter and Materials Physics. American Physical Society, 2005. https://doi.org/10.1103/PhysRevB.72.195320.
G. Katsaros et al., “Kinetic origin of island intermixing during the growth of Ge on Si (001),” Physical Review B - Condensed Matter and Materials Physics, vol. 72, no. 19. American Physical Society, 2005.
Katsaros G, Costantini G, Stoffel M, Esteban R, Bittner A, Rastelli A, Denker U, Schmidt O, Kern K. 2005. Kinetic origin of island intermixing during the growth of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics. 72(19).
Katsaros, Georgios, et al. “Kinetic Origin of Island Intermixing during the Growth of Ge on Si (001).” Physical Review B - Condensed Matter and Materials Physics, vol. 72, no. 19, American Physical Society, 2005, doi:10.1103/PhysRevB.72.195320.
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