Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling (Adv. Mater. 16/2020)
Gao F, Wang J, Watzinger H, Hu H, Rančić MJ, Zhang J, Wang T, Yao Y, Wang G, Kukucka J, Vukušić L, Kloeffel C, Loss D, Liu F, Katsaros G, Zhang J. 2020. Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling (Adv. Mater. 16/2020), Wiley,p.
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Author
Gao, Fei;
Wang, Jian‐Huan;
Watzinger, HannesISTA;
Hu, Hao;
Rančić, Marko J.;
Zhang, Jie‐Yin;
Wang, Ting;
Yao, Yuan;
Wang, Gui‐Lei;
Kukucka, JosipISTA;
Vukušić, LadaISTA
;
Kloeffel, Christoph
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Abstract
The first wafer-scale growth of site-controlled Ge/Si nanowires is reported by Georgios Katsaros, Jian-Jun Zhang, and co-workers in article number 1906523. They are highly uniform and their position, distance, length, and even square- or L-shaped structures can all be precisely controlled. The electrically tunable spin-orbit coupling demonstrated by transport measurements and the charge sensing between quantum dots in closely spaced wires open a path toward scalable qubit devices using nanowires on silicon.
Publishing Year
Date Published
2020-04-23
Proceedings Title
Advanced Materials
Volume
32
Issue
16
Article Number
2070122
ISSN
eISSN
IST-REx-ID
Cite this
Gao F, Wang J, Watzinger H, et al. Nanowires: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020). Vol 32. Wiley; 2020. doi:10.1002/adma.202070122
Gao, F., Wang, J., Watzinger, H., Hu, H., Rančić, M. J., Zhang, J., … Zhang, J. (2020). Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling (Adv. Mater. 16/2020). Advanced Materials (Vol. 32). Wiley. https://doi.org/10.1002/adma.202070122
Gao, Fei, Jian‐Huan Wang, Hannes Watzinger, Hao Hu, Marko J. Rančić, Jie‐Yin Zhang, Ting Wang, et al. Nanowires: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020). Advanced Materials. Vol. 32. Wiley, 2020. https://doi.org/10.1002/adma.202070122.
F. Gao et al., Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling (Adv. Mater. 16/2020), vol. 32, no. 16. Wiley, 2020.
Gao F, Wang J, Watzinger H, Hu H, Rančić MJ, Zhang J, Wang T, Yao Y, Wang G, Kukucka J, Vukušić L, Kloeffel C, Loss D, Liu F, Katsaros G, Zhang J. 2020. Nanowires: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling (Adv. Mater. 16/2020), Wiley,p.
Gao, Fei, et al. “Nanowires: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling (Adv. Mater. 16/2020).” Advanced Materials, vol. 32, no. 16, 2070122, Wiley, 2020, doi:10.1002/adma.202070122.
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