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45 Publications


2024 | Journal Article | IST-REx-ID: 15018 | OA
Shimura Y, Godfrin C, Hikavyy A, et al. Compressively strained epitaxial Ge layers for quantum computing applications. Materials Science in Semiconductor Processing. 2024;174(5). doi:10.1016/j.mssp.2024.108231
[Published Version] View | DOI | Download Published Version (ext.)
 

2023 | Journal Article | IST-REx-ID: 13251 | OA
Wei Y, Volosniev A, Lorenc D, et al. Bond polarizability as a probe of local crystal fields in hybrid lead-halide perovskites. The Journal of Physical Chemistry Letters. 2023;14(27):6309-6314. doi:10.1021/acs.jpclett.3c01158
[Published Version] View | Files available | DOI | WoS | arXiv
 

2023 | Journal Article | IST-REx-ID: 13197 | OA
Grosjean GM, Waitukaitis SR. Asymmetries in triboelectric charging: Generalizing mosaic models to different-material samples and sliding contacts. Physical Review Materials. 2023;7(6). doi:10.1103/physrevmaterials.7.065601
[Submitted Version] View | Files available | DOI | WoS | arXiv
 

2023 | Journal Article | IST-REx-ID: 13346 | OA
Lionello C, Perego C, Gardin A, Klajn R, Pavan GM. Supramolecular semiconductivity through emerging ionic gates in ion–nanoparticle superlattices. ACS Nano. 2023;17(1):275-287. doi:10.1021/acsnano.2c07558
[Published Version] View | DOI | Download Published Version (ext.)
 

2023 | Journal Article | IST-REx-ID: 13988 | OA
Neiheiser R, Inacio G, Rech L, Montez C, Matos M, Rodrigues L. Practical limitations of Ethereum’s layer-2. IEEE Access. 2023;11:8651-8662. doi:10.1109/access.2023.3237897
[Published Version] View | Files available | DOI | WoS
 

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